s m a l l s i g n a l s w i t c h i n g d i o d e s reverse v oltage: 250 v olts forward current: 200 ma rohs device page 1 rev :b features -design for mounting on small surface. -high speed switching. -high mounting capability , strong surge withstand, high reliability . mechanical data -case: sot -23, molded plastic. -t erminals: solderable per mil-std-750, method 2026. -approx. weight: 0.008 grams circuit diagram cdst -21/a/c/s-g maximum ratings and electrical characteristics d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) qw -b0015 comchip t echnology co., l td. repetitive peak reverse voltage reverse voltage a verage forward current power dissipation maximum forward voltage maximum reverse current maximum reverse recovery time maximum diode capacitance maximum junction temperature storage temperature units symbol parameter v rrm v r i f p d v f i r t rr c j t j t stg 1 2 3 conditions v alue @i f =100ma @i f =200ma @v r =200v i f =10ma, r l =100 v r =0v , f=1.0mhz 250 250 200 225 1.0 1.25 1 50 5 150 -55 to +150 v v ma mw v a ns pf o c cdst -21-g cdst -21a-g cdst -21c-g cdst -21s-g 1 2 3 1 2 3 1 2 3 s o t - 2 3 3 1 2 0.1 19(3.00) 0.1 10(2.80) 0.056(1.40) 0.047(1.20) 0.083(2.10) 0.066(1.70) 0.044(1.10) 0.035(0.90) 0.020(0.50) 0.013(0.35) 0.006(0.15) 0.002(0.05) 0.103(2.60) 0.086(2.20) 0.006(0.15) max 0.007(0.20) min o c (at t a=25c unless otherwise noted)
qw -b0015 ra ting and characteristic cur ves (cdst -21/a/c/s-g) forward v oltage, (v) 3.5 2 1 0 fig.1 - forward characteristics 1 10 100 1000 f r a d u r e n t , m a ) o w r c r ( reverse current, (na) 0 fig.2 reverse characteristics - 1 e e s e v l t g ( v ) r v r o a e , 10 100 1000 4 comchip t echnology co., l td. page 2 rev :b 5000 7000 2 s m a l l s i g n a l s w i t c h i n g d i o d e s 1.5 0.5 3 2.5 o t a =-55 c o t a =25 c o t a =155 c 1 3 3000 o t a =-25 c o t a =25 c o t a =155 c
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